shallow trench isolation process flow
TheSTIprocessstartsinthesamewayastheLOCOSprocess.ThefirstdifferencecomparedtoLOCOSisthatashallowtrenchisetchedintothesilicon ...,2024年1月28日—ShallowTrenchIsolation(STI)isthepreferredisolationtechniquefordeepsub-microntechnologybecauseitcomplete...
Shallow trench isolation for advanced ULSI CMOS ...
- sti divot formation
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- hump effect
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- locos
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- 淺溝渠隔離
- device isolation
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- sti field oxide
- 淺溝槽隔離
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由MNandakumar著作·1998·被引用120次—ThispaperreviewstherequirementsandchallengesindesigningaShallowTrenchIsolation(STI)processflowfor0.1/splmu/mCMOStechnologies.Various
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